CVD 150
Independently developed 6-inch (downward compatible with 4-inch ) plasma enhanced chemical vapor deposition (PECVD) equipment.
Product Features
1. Based on the thin film deposition scheme of silane system, TEOS and boron phosphorus doping process requirements can be selected;
2. Dual frequency RF system, wider profit adjustment range;
3. Millisecond precise parameter control, with high process control accuracy;
4. The operating system is a software control system developed based on Windows and conforms to semiconductor standard, which is user-friendly and in line with the operating habits of Chinese people;
5. Fully automatic wafer processing;
6. The equipment covers a small area and the site utilization rate is high;
7. Downward compatible with 4-inch Wafer;
Application Fields
Third generation semiconductors, power semiconductors, and LED chip manufacturing fields.
